AOD4140
TM
N-Channel SDMOS POWER Transistor
General Description
The AOD4140 is fabricated with SDMOS
TM
trench
technology that combines excellent R
DS(ON
) with low
gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
-RoHS Compliant
-Halogen Free*
Features
V
DS
(V) = 25V
I
D
= 43A
R
DS(ON)
<7mΩ
R
DS(ON)
<14mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
D
TO-252
D-PAK
Bottom View
D
G
S
G
S
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
C
Maximum
25
±20
43
34
120
120
35
61
50
25
2.5
1.6
-55 to 175
Units
V
V
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
SM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
Pulsed Forward Diode Current
Repetitive avalanche energy L=50uH
T
C
=25°C
Power Dissipation
Power Dissipation
B
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14.2
39
2.5
Max
20
50
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
