AOD4144
N-Channel SDMOS
TM
Power Transistor
General Description
The AOD4144 is fabricated with SDMOS
TM
trench
technology that combines excellent R
DS(ON)
with low gate
charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
Features
V
DS
(V) =30V
I
D
= 55A
R
DS(ON)
< 8mΩ
R
DS(ON)
< 14mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R
g
Tested!
Top View
D
TO-252
D-PAK
Bottom View
D
S
G
S
G
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
30
±20
55
43
110
13
10
30
45
50
25
2.3
1.4
-55 to 175
Units
V
V
A
T
C
=25°C
T
C
=100°C
C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
A
=25°C
T
A
=70°C
A
A
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
18
44
2.4
Max
22
55
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
