AOD4185
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4185 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. With the
excellent thermal resistance of the DPAK package, this
device is well suited for high current applications.
-RoHS Compliant
-Halogen Free*
Features
V
DS
(V) = -40V
I
D
= -40A
R
DS(ON)
< 15mΩ
R
DS(ON)
< 20mΩ
(V
GS
= -10V)
(V
GS
= -10V)
(V
GS
= -4.5V)
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Top View
D
Bottom View
D
G
S
G
S
G
S
Absolute Maximum Ratings T
C
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B,H
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
T
C
=25°
C
Power Dissipation
B
Power Dissipation
A
T
C
=100°
C
C
T
A
=25°
C
T
A
=70°
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A,G
Maximum Junction-to-Ambient
A,G
Maximum Junction-to-Ambient
Maximum Junction-to-Case
D,F
C
Maximum
-40
±20
-40
-31
-115
-42
88
62.5
31
2.5
1.6
-55 to 175
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
mJ
W
°
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
15
41
2
Max
20
50
2.4
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
