AOD4191L
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4191 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low gate
resistance. The device well suited for high current
applications.
Features
V
DS
(V) = -40V
I
D
= -34A
R
DS(ON)
< 25mΩ
R
DS(ON)
< 34mΩ
(V
GS
= -10V)
(V
GS
= -10V)
(V
GS
= -4.5V)
100% UIS Tested!
100% R
g
Tested!
-RoHS Compliant
-Halogen Free*
Top View
D
TO-252
D-PAK
Bottom View
D
S
G
S
G
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Continuous Drain
Current
A
Avalanche Current
C
C
C
Maximum
-40
±20
-34
-24
-70
-7
-6
-31
48
50
25
2.5
1.6
-55 to 175
Units
V
V
V
GS
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
I
D
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
I
D
I
DM
A
A
mJ
W
W
°C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16.7
40
2.5
Max
25
50
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
