AOD421
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD421 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for load switching. It is ESD
protected.
Standard Product AOD421 is Pb-free
(meets ROHS & Sony 259 specifications). AOD421L
is a Green Product ordering option. AOD421 and
AOD421L are electrically identical.
TO-252
D-PAK
Features
V
DS
(V) = -20V
I
D
= -12.5 A (V
GS
= -10V)
R
DS(ON)
< 75mΩ (V
GS
= -10V)
R
DS(ON)
< 95mΩ (V
GS
= -4.5V)
R
DS(ON)
< 145mΩ (V
GS
= -2.5V)
ESD Rating: 2000V HBM
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Power Dissipation
Power Dissipation
B
C
Maximum
-20
±12
-12.5
-8.9
-30
18.8
9.4
2
1.33
-55 to 175
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
A
I
D
I
DM
P
D
P
DSM
T
J
, T
STG
W
W
°C
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
B
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
23
50
6
Max
28
60
8
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
