AOD425
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD425 uses advanced trench technology to
provide excellent R
DS(ON)
and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a
load switch or in PWM applications. The device is ESD
protected.
-RoHS Compliant
-Halogen Free*
Features
V
DS
(V) = -30V
I
D
= -20A (V
GS
= -10V)
R
DS(ON)
< 17mΩ (V
GS
= -10V)
R
DS(ON)
< 35mΩ (V
GS
= -5V)
ESD Protected!
100% Rg Tested!
Top View
D
TO-252
D-PAK
Bottom View
D
G
S
G
S
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
F
Pulsed Drain Current
C
Maximum
-30
±25
-40
-30
-70
-9
-7
50
25
2.3
1.5
-55 to 175
Units
V
V
A
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
Continuous Drain T
A
=25°C
T
A
=70°C
Current
T
C
=25°C
Power Dissipation
Power Dissipation
B
I
DSM
P
D
P
DSM
T
J
, T
STG
A
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
18
44
2.4
Max
22
55
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
