AOD420
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD420 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product
AOD420 is Pb-free
(meets ROHS & Sony 259 specifications). AOD420L
is a Green Product ordering option. AOD420 and
AOD420L are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 10A (V
GS
= 10V)
R
DS(ON)
< 28mΩ (V
GS
= 10V)
R
DS(ON)
< 42mΩ (V
GS
= 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
30
±20
10
10
30
15
36
60
30
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
B
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16.7
40
1.9
Max
25
50
2.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
