AOD450
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD450 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in inverter, load
switching and general purpose applications.
Standard
product AOD450 is Pb-free (meets ROHS & Sony
259 specifications). AOD450L is a Green Product
ordering option. AOD450 and AOD450L are
electrically identical.
TO-252
D-PAK
Features
V
DS
(V) = 200V
I
D
= 3.8A
R
DS(ON)
<0.7Ω (V
GS
= 10V)
193
18
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
200
±30
3.8
2.7
10
3
6
25
12.5
2.1
1.3
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=1.35mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17.1
50
4
Max
30
60
6
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
