AOD454A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD454A uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. With the excellent thermal resistance of the
DPAK package, this device is well suited for high
current load applications.
-RoHS Compliant
-Halogen Free*
TO-252
D-PAK Bottom View
Features
V
DS
(V) = 40V
I
D
= 12A
(V
GS
= 10V)
R
DS(ON)
< 30mΩ (V
GS
= 10V)
R
DS(ON)
< 40mΩ (V
GS
= 4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
D
D
S
G
S
G
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
B,H
Pulsed Drain Current
C
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
T
C
=25°C
Power Dissipation
B
Power Dissipation
A
T
C
=100°C
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,G
Maximum Junction-to-Ambient
A,G
Maximum Junction-to-Case
F
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
V
GS
Maximum
40
±20
12
10
40
14
9.8
37
18
2.5
1.6
-55 to 175
Units
V
V
A
mJ
W
°C
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16.7
40
3
Max
25
50
4
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
