AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
0
0
10
20
30
40
50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1000
T
J(Max)
=175°C, T
C
=25°C
10µs
100
Power (W)
I
D
(Amps)
100µs
10
R
DS(ON)
limited
1
DC
1ms
V
DS
=15V
I
D
=20A
9000
8000
7000
Capacitance (pF)
6000
5000
4000
3000
2000
1000
0
0
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
25
C
oss
C
rss
C
iss
4.63
494
692
593
830
193
18
200
160
120
80
40
0
0.0001
T
J(Max)
=175°C
T
C
=25°C
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
10
100
0.001
59
0.1
142
Pulse Width (s)
0.01
1
10
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
