AOD486A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD486A uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. It is ESD protected. This device is suitable for
use in PWM, load switching and general purpose
applications.
Standard Product AOD486A is Pb-free
(meets ROHS & Sony 259 specifications).
Features
V
DS
(V) = 40V
I
D
= 50 A (V
GS
= 10V)
R
DS(ON)
< 9.8 mΩ (V
GS
= 10V)
R
DS(ON)
< 13 mΩ (V
GS
= 4.5V)
ESD PROTECTED
UIS Tested
Rg,Ciss,Coss,Crss Tested
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
40
±20
50
36
100
30
135
50
25
4.1
2.7
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.3mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17.4
45
1.2
Max
30
60
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
