AOD494
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD494 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications.
Standard Product
AOD494 is Pb-free (meets ROHS & Sony 259
specifications). AOD494L is a Green Product ordering
option. AOD494 and AOD494L are electrically
identical.
Features
V
DS
(V) = 30V
I
D
= 55A (V
GS
= 10V)
R
DS(ON)
<11mΩ (V
GS
= 10V)
R
DS(ON)
< 13.5mΩ (V
GS
= 4.5V)
TO-252
D-PAK
Top View
Drain Connected to
Tab
D
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
T
C
=25°C
Continuous Drain
Current
T
C
=100°C
I
D
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
30
±12
55
39
120
30
135
63
31
4
2.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
Repetitive avalanche energy L=0.3mH
B
T
C
=25°C
Power Dissipation
T
C
=100°C
T
A
=25°C
A
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
A,D
Maximum Junction-to-Ambient
B
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
15
41
2
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
