AOD604
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOD604 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.
Standard product AOD604 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD604L is a Green Product ordering option.
AOD604 and AOD604L are electrically
identical.
TO-252
D-PAK
Features
n-channel
p-channel
-40V
V
DS
(V) = 40V
I
D
= 8A (V
GS
=10V)
-8A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 33 mΩ (V
GS
=10V)
< 50 m
Ω
(V
GS
= -10V)
< 70 m
Ω
(V
GS
= -4.5V)
< 47 mΩ (V
GS
=4.5V)
D2
D1
Top View
Drain Connected to
Tab
G2
S2
G1
S1
n-channel
S1 G1 D1/D2 G2 S2
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
40
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Max p-channel
-40
±20
8
8
-30
-8
30
50
25
2.5
1.6
-55 to 175
Typ
17.4
50
4
16.7
40
2.5
Max
30
60
7.5
25
50
3
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
C
=25°C
8
8
30
8
20
20
10
2
1.3
-55 to 175
Symbol
R
θJA
R
θJC
R
θJA
R
θJC
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
T
J
, T
STG
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Case
B
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Case
B
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
