AOL1412
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1412 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent R
DS(ON)
,and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AOL1412 is Pb-free (meets ROHS & Sony
259 specifications). AOL1412L is a Green Product
ordering option. AOL1412 and AOL1412L are
electrically identical.
TM
Features
V
DS
(V) = 30V
I
D
=85A (V
GS
= 10V)
R
DS(ON)
< 3.9mΩ (V
GS
= 10V)
R
DS(ON)
< 4.6mΩ (V
GS
= 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Fits SOIC8
footprint !
G
S
D
Ultra
SO-8
Top View
D
S
Bottom tab
connected to
drain
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Continuous Drain
Current
H
Avalanche Current
C
Repetitive avalanche energy L=0.3mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
30
±12
85
84
200
27
21
40
240
100
50
5
3
-55 to 175
Units
V
V
A
T
C
=25°C
I
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
19.6
50
1
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
