AOL1418
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1418 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOL1418 is Pb-free (meets ROHS
& Sony 259 specifications). AOL1418L is a Green
Product ordering option. AOL1418 and AOL1418L
are electrically identical.
Ultra
SO-8
TM
Top View
D
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 6.5mΩ (V
GS
= 10V)
R
DS(ON)
< 10.5mΩ (V
GS
= 4.5V)
Fits SOIC8
footprint !
D
Bottom tab
connected to
drain
G
S
S
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B
T
C
=25°C
G
T
C
=100°C
I
D
I
DM
I
DSM
I
AR
C
Maximum
30
±20
85
70
200
15
12
30
135
100
50
2.5
1.6
-55 to 175
Units
V
V
Pulsed Drain Current
Continuous Drain
T
A
=25°C
G
Current
T
A
=70°C
C
Avalanche Current
Repetitive avalanche energy L=0.3mH
Power Dissipation
Power Dissipation
B
A
A
mJ
W
W
°C
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
19.5
48
1
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
