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AOL1424 参数 Datasheet PDF下载

AOL1424图片预览
型号: AOL1424
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 121 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AOL1424
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1424 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5V,while
retaining a 20V V
GS(MAX)
rating. It is ESD
protected.This device is suitable for use as a load
switch.
Standard Product AOL1424 is Pb-free (meets
ROHS & Sony 259 specifications).
Features
V
DS
(V) = 30V
I
D
= 70A (V
GS
= 10V)
R
DS(ON)
< 5.4mΩ (V
GS
= 10V)
R
DS(ON)
< 8mΩ (V
GS
= 4.5V)
ESD Protected
UIS Tested!
Rg, Ciss,Coss,Crss Tested
Ultra
SO-8
TM
Top View
D
Fits SOIC8
footprint !
G
D
S
Bottom tab
connected to
drain
G
Maximum
30
±20
70
I
D
I
DM
I
DSM
I
AR
H
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
B
Current
Pulsed Drain Current
Continuous Drain
A
Current
Avalanche Current
H
C
Units
V
V
A
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
50
120
23
18
30
135
50
25
5
3
-55 to 175
A
A
mJ
W
W
°C
Repetitive avalanche energy L=0.3mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
D
Symbol
A
A
t
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
20
45
2.5
Max
24
55
3.0
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com