AOL1454
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1454 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It is ESD
protected. This device is suitable for use as a low side
switch in SMPS and general purpose applications.
Standard Product AOL1454 is Pb-free (meets ROHS
& Sony 259 specifications).
Features
V
DS
(V) = 40V
I
D
= 50A (V
GS
= 10V)
R
DS(ON)
< 9mΩ (V
GS
= 10V)
R
DS(ON)
< 13mΩ (V
GS
= 4.5V)
ESD Protected
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra
SO-8
TM
Top View
D
Fits SOIC8
footprint !
G
D
S
Bottom tab
connected to
drain
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Continuous Drain
Current
A
Avalanche Current
C
Repetitive avalanche energy L=0.3mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
C
Maximum
40
±20
50
48
100
17
13
30
135
60
30
5.0
3.2
-55 to 175
Units
V
V
A
T
C
=25°C
H
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
20
50
1.8
Max
25
60
2.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
