AOL1413
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1413 uses advanced trench technology to
provide excellent R
DS(ON)
and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications. The device is
ESD protected.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Features
V
DS
(V) = -30V
I
D
= -20A (V
GS
= -10V)
R
DS(ON)
< 17mΩ (V
GS
= -10V)
R
DS(ON)
< 36mΩ (V
GS
= -5V)
ESD Protected!
Ultra
SO-8
TM
Top View
D
Bottom tab
connected to
drain
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
B
Current
Pulsed Drain Current
C
Continuous Drain
A
Current
Power Dissipation
Power Dissipation
B
D
G
S
S
Maximum
-30
±25
-38
-27
-70
-9
-7
38
19
2.1
1.3
-55 to 175
Units
V
V
V
GS
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
DSM
P
D
P
DSM
T
J
, T
STG
I
D
I
DM
A
W
W
°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
18
49
2.9
Max
25
60
4
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
