AOL1401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1401 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected.
Standard Product AOL1401 is Pb-
free (meets ROHS & Sony 259 specifications).
AOL1401L is a Green Product ordering option.
AOL1401 and AOL1401L are electrically identical.
Ultra
SO-8
TM
Top View
Fits SOIC8
footprint !
D
Features
V
DS
(V) = -38V
I
D
= -85A
R
DS(ON)
< 8.5mΩ (V
GS
= -10V)
R
DS(ON)
< 10mΩ (V
GS
= -4.5V)
ESD Rating: 3000V HBM
D
Bottom tab
connected to
drain
G
S
S
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
G
Power Dissipation
Power Dissipation
B
C
Maximum
-38
±25
-85
-62
-120
-12
-9
100
50
2.1
1.3
-55 to 175
Units
V
V
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
A
I
D
I
DM
I
DSM
P
D
P
DSM
T
J
, T
STG
A
W
W
°C
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
21
48
1
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
