AOL1420
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1420 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOL1420 is Pb-free (meets ROHS
& Sony 259 specifications). AOL1420L is a Green
Product ordering option. AOL1420 and AOL1420L
are electrically identical.
Ultra
SO-8
TM
Top View
Fits SOIC8
footprint !
Bottom tab
connected to
drain
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 3.7mΩ (V
GS
= 10V)
R
DS(ON)
< 5.5mΩ (V
GS
= 4.5V)
D
D
G
S
S
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Continuous Drain
Current
G
Avalanche Current
C
C
Maximum
30
±20
85
63
150
18
14
30
112
100
50
2.1
1.3
-55 to 175
Units
V
V
T
C
=25°C
G
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
19.6
50
0.9
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
