AOL1444
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1444 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion.
Standard Product AOL1444 is
Pb-free (meets ROHS & Sony 259 specifications).
AOL1444L is a Green Product ordering option.
AOL1444 and AOL1444L are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 4.3mΩ (V
GS
= 10V)
R
DS(ON)
< 6.3mΩ (V
GS
= 4.5V)
Ultra
SO-8
TM
Top View
D
Fits SOIC8
footprint !
D
S
Bottom tab
connected to
drain
G
G
S
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Maximum
Symbol
30
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
±20
Continuous Drain
B,G
Current
Pulsed Drain Current
Continuous Drain
G
Current
Avalanche Current
C
C
Units
V
V
A
T
C
=25°C
G
B
85
I
D
I
DM
I
DSM
I
AR
73
200
17
13
30
45
100
50
2.1
1.3
-55 to 175
Symbol
R
θJA
R
θJC
Typ
19.6
48
1
Max
25
60
1.5
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Repetitive avalanche energy L=0.1mH
E
AR
T
C
=25°C
P
D
B
Power Dissipation
T
C
=100°C
T
A
=25°C
P
DSM
A
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range T
J
, T
STG
Thermal Characteristics
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Case
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
