AOL1704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
10
20
30
40
50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
4.50E-09
4.00E-09
Capacitance (nF)
V
DS
=15V
I
D
=20A
3.50E-09
3.00E-09
2.50E-09
2.00E-09
1.50E-09
1.00E-09
5.00E-10
0.00E+00
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
C
rss
C
iss
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
T
J(Max)
=175°C
T
C
=25°C
R
DS(ON)
limited
10µs
100µs
1ms
DC
10ms
Power (W)
120
110
100
90
80
70
60
50
10
100
40
0.01
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.1
T
J(Max)
=175°C
T
C
=25°C
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJc
.R
θJc
R
θJC
=3°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
