AOL1712
N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
General Description
SRFET
TM
AOL1712 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R
DS(ON)
,and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
TM
Features
V
DS
(V) = 30V
(V
GS
= 10V)
I
D
=65A
R
DS(ON)
< 4.2mΩ (V
GS
= 10V)
R
DS(ON)
< 5.5mΩ (V
GS
= 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra
SO-8
Top View
D
Bottom tab
connected to
drain
G
D
S
G
SRFET
Soft Recovery
MOSFET:
Integrated Schottky Diode
S
TM
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
B, H
Current
Pulsed Drain Current
Continuous Drain
A
Current
Avalanche Current
C
Repetitive avalanche energy L=0.3mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
30
±12
65
Units
V
V
A
V
GS
T
C
=25°C
T
C
=100°C
C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
65
80
16
12
38
217
100
50
2.1
1.3
-55 to 175
T
A
=25°C
T
A
=70°C
A
A
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
D
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
19.6
50
1
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
