AOL1718
N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
General Description
SRFET
TM
AOL1718 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent R
DS(ON
),and low gate charge. This device is
ideally suited for use as a low side switch in CPU core
power conversion.
Features
V
DS
(V) = 30V
I
D
= 90A
R
DS(ON)
< 3mΩ
R
DS(ON)
< 4.3mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R
g
Tested!
UltraSO-8
TM
Top View
D
Bottom tab
connected to
drain
G
D
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
G
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
90
71
410
21
16
40
80
100
50
2.1
1.3
-55 to 175
Units
V
V
A
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
19.6
48
1
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
