AON3408
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON3408 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
Standard
Product AON3408 is Pb-free (meets ROHS & Sony
259 specifications).
Features
Features
V
DS
(V) ==30V
V
DS
(V) 30V
I
DD
==11A (V
GS
==10V)
I 8.8A (V
GS
10V)
R
DS(ON)
< 24mΩ (V
GS GS
10V)
R
DS(ON)
< 14.5mΩ (V = = 10V)
R
DS(ON)
<<29mΩ (V
GS
==4.5V)
R
DS(ON)
18mΩ (V
GS
4.5V)
R
DS(ON)
< 45mΩ (V
GS
= 2.5V)
Rg,Ciss,Coss,Crss Tested
DFN 3x3
Top View
Bottom View
S
S
S
G
D
D
D
D
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
T
A
=25°C
T
A
=70°C
I
DSM
I
DM
P
DSM
T
J
, T
STG
Maximum
30
±12
8.5
7.2
40
3.0
1.9
-55 to 150
Units
V
V
A
A
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
32
65
25
Max
42
100
35
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
