AON3806
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON3806 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
Standard Product AON3806is Pb-
free (meets ROHS & Sony 259 specifications).
AON3806L is a Green Product ordering option.
AON3806 and AON3806L are electrically identical.
Features
V
DS
(V) = 20V
I
D
= 7.3 A (V
GS
= 10V)
R
DS(ON)
< 26mΩ (V
GS
= 4.5V)
R
DS(ON)
< 27mΩ (V
GS
= 4V)
R
DS(ON)
< 32mΩ (V
GS
= 2.5V)
ESD Rating: 2500V HBM
DFN 3x3
Top View
Bottom View
S2
G2
S1
G1
D2
D2
D1
D1
G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
A
Maximum
20
±12
7.3
5.8
30
2.2
1.4
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
T
A
=70°C
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
43
77
36
Max
56
110
50
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
