AON4420L
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON4420L combines advanced trench MOSFET
technology with a small footprint package to provide low
R
DS(ON)
per unit area. This device is ideal for load switch
and high speed switching applications.
Features
V
DS
(V) = 30V
I
D
= 10A
R
DS(ON)
< 19mΩ
R
DS(ON)
< 25mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
- RoHS Compliant
- Halogen Free
DFN 3x2
Top View
Pin 1
Bottom View
D
D
D
G
D
D
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Pulsed Drain Current
Continuous Drain
Current
A
Power Dissipation
A
C
Maximum
30
±20
50
10
8
1.6
1
-55 to 150
Units
V
V
I
DM
I
D
P
D
T
J
, T
STG
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
A
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
34
66
20
Max
40
80
25
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
