AON4602
Complementary Enhancement Mode Field Effect Transistor
General Description
The AON4602 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AON4602 is Pb-free (meets ROHS
& Sony 259 specifications). AON4602L is a Green
Product ordering option. AON4602 and AON4602L are
electrically identical.
Features
n-channel
V
DS
(V) = 20V
I
D
= 4.2A
p-channel
-20V
-3.4A
(V
GS
= ±4.5V)
(V
GS
= ±4.5V)
(V
GS
= ±2.5V)
(V
GS
= ±1.8V)
D2
R
DS(ON)
< 50mΩ
< 90mΩ
R
DS(ON)
< 63mΩ < 120mΩ
R
DS(ON)
< 87mΩ < 160mΩ
D1
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
G1
S1
G2
S2
DFN3X2
n-channel
p-channel
Units
V
V
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
Max n-channel
V
DS
Drain-Source Voltage
20
V
GS
Gate-Source Voltage
±8
Continuous Drain
T
A
=25°C
4.2
A
Current
3.2
I
D
T
A
=70°C
Pulsed Drain Current
B
Max p-channel
-20
±8
-3.4
-2.7
-15
1.7
1.1
-55 to 150
I
DM
P
D
T
J
, T
STG
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
15
1.4
0.9
-55 to 150
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Typ
49
81
37
Max
90
125
80
Max
75
100
45
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
