AON4604
Complementary Enhancement Mode Field Effect Transistor
General Description
The AON4604 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AON4604 is Pb-free (meets ROHS &
Sony 259 specifications).
Features
n-channel
V
DS
(V) = 20V
I
D
= 5.4A
R
DS(ON)
< 42mΩ
R
DS(ON)
< 52mΩ
R
DS(ON)
< 72mΩ
p-channel
-20V
-3.8A
(V
GS
= ±4.5V)
< 90mΩ
(V
GS
= ±4.5V)
< 120mΩ (V
GS
= ±2.5V)
< 170mΩ (V
GS
= ±1.8V)
D1
D2
DFN3X2-8L
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
G1
S1
G2
S2
n-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
20
V
GS
Gate-Source Voltage
±8
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
p-channel
Units
V
V
A
Max p-channel
-20
±8
-3.8
-3.0
-15
1.9
1.2
-55 to 150
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
5.4
4.3
15
1.9
1.2
-55 to 150
W
°C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
51.5
82
37
Typ
51.5
82
37
Max
65
100
50
Max
65
100
50
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
