AON4701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AON4701 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the implementation
of a bidirectional blocking switch, or for DC-DC
conversion applications. Standard Product AON4701 is
Pb-free (meets ROHS & Sony 259 specifications).
AON4701L is a Green Product ordering option. AON4701
and AON4701L are electrically identical.
Features
V
DS
(V) = -20V
I
D
= -3.4A (V
GS
= -4.5V)
R
DS(ON)
< 90mΩ (V
GS
= -4.5V)
R
DS(ON)
< 120mΩ (V
GS
= -2.5V)
R
DS(ON)
< 160mΩ (V
GS
= -1.8V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
D
A
A
S
G
1
2
3
4
8
7
6
5
K
K
D
D
G
S
K
DFN3X2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
T
A
=25°C
I
D
A
Continuous Drain Current
T
A
=70°C
I
DM
Pulsed Drain Current
B
V
KA
Schottky reverse voltage
T
A
=25°C
I
F
A
Continuous Forward Current
T
A
=70°C
I
FM
Pulsed Forward Current
B
T
A
=25°C
P
D
T
A
=70°C
Power Dissipation
T
J
, T
STG
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
A
C
Steady-State
Maximum Junction-to-Lead
Thermal Characteristics Schottky
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Lead
C
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
MOSFET
-20
±8
-3.4
-2.7
-15
A
Schottky
Units
V
V
A
20
1.9
1.2
1.7
1.1
-55 to 150
Typ
49
81
37
60
89
40
7
0.96
0.62
-55 to 150
Max
75
100
45
75
130
50
V
A
W
°C
Units
°C/W
°C/W
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
