AON6405L
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON6405L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
.This device is ideal for load
switch and battery protection applications.
Features
V
DS
(V) = -30V
(V
GS
= -10V)
I
D
= -30A
R
DS(ON)
< 7mΩ (V
GS
= -10V)
R
DS(ON)
< 8mΩ (V
GS
= -4.5V)
ESD Protected!
100% UIS Tested!
-RoHS Compliant
-Halogen Free
Top View
Fits SOIC8
footprint !
S
S
S
G
D
D
D
D
G
Rg
D
DFN5X6
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
G
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
C
S
Maximum
-30
±20
-30
-23
-160
-15
-12
-54
146
83
33
2.5
1.6
-55 to 150
Units
V
V
A
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14.2
42
1.2
Max
17
50
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
