AON6426L
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON6426L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load
switch and battery protection applications.
Features
V
DS
(V) = 30V
I
D
= 24A
R
DS(ON)
< 5.5mΩ
R
DS(ON)
< 7.5mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R
g
Tested!
Top View
Fits SOIC8
footprint !
S
S
S
G
D
D
D
D
G
D
DFN5X6
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
C
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
T
C
=25°
Power Dissipation
Power Dissipation
B
C
S
Maximum
30
±20
24
19
130
14
11
42
88
42
17
2
1.2
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
24
53
2.6
Max
30
64
3
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
