AON6450L
N-Channel SDMOS
TM
Power Transistor
General Description
The AON6450L is fabricated with SDMOS
TM
trench
technology that combines excellent R
DS(ON)
with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose applications.
Product Summary
Parameter
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 7V)
100V
52A
< 14.5mΩ
< 17.5mΩ
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R
g
Tested!
D
Top View
Fits SOIC8
footprint !
G
S
DFN5X6
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
C
Maximum
100
±25
52
33
110
9
7
41
84
83
33
2.3
1.4
-55 to 150
Units
V
V
A
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14
40
1
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Rev 0: January 2009
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
