AON7401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AON7401/L uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications.
AON7401 and AON7401L are electrically identical.
-RoHS Compliant
-AON7401L is Halogen Free
Features
V
DS
(V) = -30V
(V
GS
= -10V)
I
D
= -9A
R
DS(ON)
< 14mΩ (V
GS
= -10V)
R
DS(ON)
< 36mΩ (V
GS
= -4.5V)
DFN 3x3
Top View
Bottom View
D
Pin 1
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Continuous Drain
Current
Power Dissipation
Power Dissipation
B
C
Maximum
-30
±25
-20
-20
-80
-9
-7
27
11
1.6
1
-55 to 150
Units
V
V
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
A
I
D
I
DM
I
DSM
P
D
P
DSM
T
J
, T
STG
A
W
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
D
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
30
60
4
Max
40
75
4.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
