AON7406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON7406 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in SMPS and
general purpose applications.
Standard Product
AON7406 is Pb-free (meets ROHS & Sony 259
specifications).
Features
V
DS
(V) = 30V
(V
GS
= 10V)
I
D
= 11A
R
DS(ON)
< 15mΩ (V
GS
= 10V)
R
DS(ON)
< 23.5mΩ (V
GS
= 4.5V)
DFN 3x3
Top View
Bottom View
D
Pin 1
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,H
Pulsed Drain Current
Continuous Drain
Current
G
Power Dissipation
Power Dissipation
B
C
Maximum
30
±20
20
20
50
11
8.8
27
11
3.1
2
-55 to 150
Units
V
V
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
A
I
D
I
DM
I
DSM
P
D
P
DSM
T
J
, T
STG
A
W
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
D
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
30
60
4
Max
40
75
4.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
