AON7702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=13.5A
Capacitance (pF)
3000
2500
C
iss
2000
1500
1000
500
0
0
10
20
30
40
0
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100
1000
10µs
100µs
1ms
10ms
100ms
1s
10s
100
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
8
V
GS
(Volts)
6
4
C
oss
2
0
T
J(Max)
=150°C
T
A
=25°C
10
I
D
(Amps)
1
Power (W)
R
DS(ON)
limited
0.1
10
T
J(Max)
=150°C
T
A
=60°C
0.1
1
DC
0.01
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
150
1
35
14
0.1
-55 to 150
0.01
P
D
T
on
0.001
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
60
3
10
75
3.5
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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