AOP600
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP600 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AOP600 is Pb-free (meets ROHS
& Sony 259 specifications). AOP600L is a Green
Product ordering option. AOP600 and AOP600L are
electrically identical.
Features
n-channel
p-channel
-30V
V
DS
(V) = 30V
I
D
= 7.5A (V
GS
= 10V) -6.6A
R
DS(ON)
< 28mΩ
< 35mΩ (V
GS
=
-10V)
< 43mΩ
< 58mΩ (V
GS
=- 4.5V)
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
G2
S2
G1
S1
PDIP-8
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Max p-channel
-30
±20
-6.6
-5.3
-30
2.5
1.6
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
7.5
6
30
2.5
1.6
-55 to 150
W
°C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
40
67
33
Typ
38
66
30
Max
50
80
40
Max
50
80
40
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
