AOP607
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP607 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs
may be used in H-bridge, Inverters and other
applications.
Standard Product AOP607 is Pb-
free (meets ROHS & Sony 259 specifications).
AOP607L is a Green Product ordering option.
AOP607 and AOP607L are electrically identical.
Features
n-channel
p-channel
-60V
V
DS
(V) = 60V
I
D
= 4.7A (V
GS
=10V)
-3.4A (V
GS
=-10V)
R
DS(ON)
R
DS(ON)
< 56mΩ (V
GS
=10V)
< 105mΩ (V
GS
=-10V)
< 77mΩ (V
GS
=4.5V)
< 135mΩ (V
GS
=-4.5V)
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
G2
S2
G1
S1
PDIP-8
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
60
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Max p-channel
-60
±20
-3.4
-2.7
-20
2.5
1.6
-55 to 150
Typ
37
74
28
35
73
32
Units
V
V
A
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
±20
4.7
3.8
20
2.5
1.6
-55 to 150
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
W
°C
T
J
, T
STG
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Lead
C
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Lead
C
Max Units
50 °C/W
90 °C/W
40 °C/W
50
90
40
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
