AOP610
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP610 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs
may be used to form a level shifted high side
switch, and for a host of other applications. A
Schottky diode in parallel with the n-channel
FET reduces body diode related losses. It is
ESD protected.
Standard product AOP610 is
Pb-free (meets ROHS & Sony 259
specifications). AOP610L is a Green Product
ordering option. AOP610 and AOP610L are
electrically identical.
Features
n-channel
p-channel
V
DS
(V) = 30V
-30V
-6.2A (V
GS
=10V)
I
D
= 7.7A (V
GS
=10V)
R
DS(ON)
R
DS(ON)
< 24mΩ (V
GS
=10V)
< 37m
Ω
(V
GS
= -10V)
< 42mΩ (V
GS
=4.5V)
< 60m
Ω
(V
GS
= -4.5V)
ESD rating: 1500V (HBM)
PDIP-8
S2/A
G2
S1
G1
1
2
3
4
8
7
6
5
D2/K
D2/K
D1
D1
D2
D1
K2
G1
A2
N-ch
P-ch
G2
S2
S1
n-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
Avalanche Current
B
B
p-channel
Max p-channel
-30
±20
-6.2
-4.9
-30
2.3
1.45
20
20
-55 to 150
W
A
mJ
°C
A
Units
V
V
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
B
7.7
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
6.1
30
2.3
1.45
15
11
-55 to 150
Repetitive avalanche energy 0.1mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel+schottky and p-channel
Symbol
Parameter
A
t
≤
10s
Maximum Junction-to-Ambient
R
θJA
A
Steady-State
Maximum Junction-to-Ambient
R
θJL
Steady-State
Maximum Junction-to-Lead
C
A
t
≤
10s
Maximum Junction-to-Ambient
R
θJA
A
Steady-State
Maximum Junction-to-Ambient
C
R
θJL
Steady-State
Maximum Junction-to-Lead
Typ
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Max
45
78
30
38.5
78
28
55
95
40
55
95
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.