AOP806
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOP806 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge.
This device is suitable for use as a load switch or
in PWM applications.
Standard Product AOP806 is Pb-free (meets
ROHS & Sony 259 specifications).
Features
V
DS
(V) = 75V
I
D
= 3.4A (V
GS
= 10V)
R
DS(ON)
< 132mΩ (V
GS
= 10V)
R
DS(ON)
< 168mΩ (V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D1
S2
G2
S1
G1
D2
D2
D1
D1
D2
1
2
3
4
8
7
6
5
G1
S1
G2
S2
PDIP-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Power Dissipation
Avalanche Current
B
B
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
B
Maximum
10 Sec
Steady State
75
±25
3.4
2.7
2.1
15
2.5
1.6
10
15
-55 to 150
1.6
1
2.7
Units
V
V
A
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
W
A
mJ
°C
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
40
67
33
Max
50
80
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
