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AOP804 参数 Datasheet PDF下载

AOP804图片预览
型号: AOP804
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 115 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AOP804
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOP804 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AOP804 is Pb-free
(meets ROHS & Sony 259 specifications). AOP804L
is a Green Product ordering option. AOP804 and
AOP804L are electrically identical.
Features
V
DS
(V) = 60V
I
D
= 4.7A (V
GS
= 10V)
R
DS(ON)
< 55mΩ (V
GS
= 10V)
R
DS(ON)
< 75mΩ (V
GS
= 4.5V)
D1
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
D2
PDIP-8
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Maximum
60
±20
4.7
3.8
20
3.1
2
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
37
74
28
Max
50
90
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.