AOT3N60
2.5A, 600V N-Channel MOSFET
formerly engineering part number AOT9602
General Description
The AOT3N60 has been fabricated using an
advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
V
DS
(V) = 700V @ 150°C
I
D
= 2.5A
R
DS(ON)
< 3.5
Ω
(V
GS
= 10V)
100% UIS Tested!
100% R
g
Tested!
C
iss,
C
oss
, C
rss
Tested!
Top View
D
TO-220
G
G
S
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Maximum
Parameter
Symbol
V
DS
Drain-Source Voltage
600
V
GS
Gate-Source Voltage
±30
Continuous Drain
T
C
=25°C
2.5
B
Current
T
C
=100°C
I
D
1.6
Pulsed Drain Current
Avalanche Current
C
C
G
C
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ C
°C
°C
o
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
R
θJC
Typical
54
-
1.2
8
2
60
120
5
59.5
0.48
-50 to 150
300
Maximum
65
0.5
2.1
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Case-to-Sink
Maximum Junction-to-Case
D,F
A
A
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
