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AOT400 参数 Datasheet PDF下载

AOT400图片预览
型号: AOT400
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 70 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AOT400
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT400 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard
Product AOT400 is Pb-free (meets ROHS & Sony
259 specifications). AOT400L is a Green Product
ordering option. AOT400 and AOT400L are
electrically identical.
TO-220
D
Features
V
DS
(V) = 75V
I
D
= 110 A
(V
GS
= 10V)
R
DS(ON)
< 4.7 mΩ (V
GS
= 10V)
R
DS(ON)
< 5.2 mΩ (V
GS
= 6V)
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
75
±20
110
110
200
100
1500
300
150
-55 to 175
Units
V
V
A
A
mJ
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
B
T
C
=100°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
Steady-State
Symbol
R
θJA
R
θJC
Typ
65
0.25
Max
75
0.5
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.