AOT404
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT404 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications.
Standard Product AOT404 is
Pb-free (meets ROHS & Sony 259 specifications).
AOT404L is a Green Product ordering option.
AOT404 and AOT404L are electrically identical.
TO-220
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Features
V
DS
(V) = 105V
I
D
= 40 A (V
GS
=10V)
R
DS(ON)
< 28 mΩ (V
GS
=10V) @ 20A
R
DS(ON)
< 31 mΩ (V
GS
= 6V)
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
105
±25
40
28
100
20
200
100
50
-55 to 175
Units
V
V
A
A
mJ
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
B
T
C
=100°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
Steady-State
Symbol
R
θJA
R
θJC
Typ
50
1
Max
60
1.5
Units
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
