AOT4N60/AOTF4N60
600V, 4A N-Channel MOSFET
General Description
The AOT4N60 & AOTF4N60 have been fabricated
using an advanced high voltage MOSFET process that
is designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
V
DS
(V) = 700V @ 150°C
I
D
= 4A
R
DS(ON)
< 2.2Ω
(V
GS
= 10V)
100% UIS Tested!
100% R
g
Tested!
TO-220
Top View
TO-220F
D
G
D
G
S
D
G
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
AOT4N60
Symbol
AOTF4N60
V
DS
Drain-Source Voltage
600
V
GS
±30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C, G
C, G
G
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
4
2.5
16
2.5
94
188
5
104
0.83
-50 to 150
300
AOT4N60
65
0.5
1.2
4*
2.5*
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
35
0.28
AOTF4N60
65
--
3.6
Units
°C/W
°C/W
°C/W
R
θCS
Maximum Case-to-Sink
A
R
θJC
Maximum Junction-to-Case
* Drain current limited by maximum junction temperature.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
