AOT500
N-Channel Enhancement Mode Field Effect Transistor
General Description
AOT500 uses an optimally designed temperature
compensated gate-drain zener clamp. Under overvoltage
conditions, the clamp activates and turns on the
MOSFET, safely dissipating the energy in the MOSFET.
The built in resistor guarantees proper clamp operation
under all circuit conditions, and the MOSFET never goes
into avalanche breakdown. Advanced trench technology
provides excellent low Rdson, gate charge and body
diode characteristics, making this device ideal for motor
and inductive load control applications.
Standard Product AOT500 is Pb-free (meets ROHS &
Sony 259 specifications).
TO-220
D
Top View
Drain
Connected to
Tab
Features
V
DS
(V) = Clamped
I
D
= 80A (V
GS
= 10V)
R
DS(ON)
< 5.3 mΩ (V
GS
= 10V)
G
10Ω
G
D
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Maximum
V
DS
Drain-Source Voltage
clamped
V
GS
Gate-Source Voltage
clamped
Continuous Drain
T
C
=25°C
80
G
Current
I
D
T
C
=100°C
57
Continuous Drain Gate Current
+50
I
DG
Continuouse Gate Source Current
+50
I
GS
Pulsed Drain Current
C
Avalanche Current L=100uH
Repetitive avalanche energy
B
H
H
Units
V
V
A
mA
A
A
mJ
W
°C
I
DM
I
AR
E
AR
250
50
125
115
58
-55 to 175
T
C
=25°C
P
D
Power Dissipation
T
C
=100°C
Junction and Storage Temperature Range T
J
, T
STG
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Steady-State
Steady-State
Symbol
R
θJA
R
θJC
Typ
60
0.7
Max
75
1.3
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
