AOT8N60/AOTF8N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10V
15
6.5V
6V
I
D
(A)
10
I
D
(A)
10
125°C
100
V
DS
=40V
-55°C
1
5
V
GS
=5.5V
25°C
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
1.6
Normalized On-Resistance
1.4
R
DS(ON)
(m
Ω
)
1.2
1.0
0.8
0.6
0.4
0
2
4
6
8
10
12
14
16
V
GS
=10V
0.1
2
4
6
8
10
V
GS
(Volts)
Figure 2: Transfer Characteristics
3
2.5
2
1.5
1
0.5
0
-100
V
GS
=10V
I
D
=4A
-50
0
50
100
150
200
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
125°C
1.0E+00
1.0E-01
1.0E-02
25°C
BV
DSS
(Normalized)
1.1
I
S
(A)
1
0.9
1.0E-03
1.0E-04
-50
0
50
100
150
200
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.8
-100
T
J
(
o
C)
Figure 5: Break Down vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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