AOT8N60 / AOTF8N60
600V, 8A N-Channel MOSFET
formerly engineering part number AOT9606/AOTF9606
General Description
The AOT8N60 & AOTF8N60 have been fabricated
using an advanced high voltage MOSFET process
that is designed to deliver high levels of performance
and robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
V
DS
(V) = 700V @ 150°C
I
D
= 8A
R
DS(ON)
< 0.9
Ω
(V
GS
= 10V)
100% UIS Tested!
100% R
g
Tested!
C
iss
, C
oss
, C
rss
Tested!
TO-220
Top View
TO-220F
D
G
G
D
G
S
D
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AOT8N60
Parameter
Symbol
AOTF8N60
V
DS
Drain-Source Voltage
600
V
GS
Gate-Source Voltage
±30
Continuous Drain
B
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ C
°C
°C
o
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
8
5
32
3.2
150
300
5
147
1.17
-50 to 150
300
AOT8N60
65
0.5
0.85
8*
5*
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
B
o
Power Dissipation
Derate above 25 C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
50
0.4
AOTF8N60
65
-
2.5
Units
°C/W
°C/W
°C/W
Maximum Case-to-Sink
D,F
R
θJC
Maximum Junction-to-Case
* Drain current limited by maximum junction temperature.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
