AOT12N50 / AOTF12N50
500V, 12A N-Channel MOSFET
General Description
The AOT12N50 & AOTF12N50 have been fabricated
using an advanced high voltage MOSFET process
that is designed to deliver high levels of performance
and robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
V
DS
(V) =600V@150°C
I
D
= 12A
R
DS(ON)
< 0.52Ω
(V
GS
= 10V)
100% UIS Tested!
100% R
g
Tested!
TO-220
Top View
TO-220F
D
G
G
D
G
S
D
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AOT12N50
Parameter
Symbol
AOTF12N50
V
DS
Drain-Source Voltage
500
V
GS
Gate-Source Voltage
±30
Continuous Drain
Current
B
Pulsed Drain Current
Avalanche Current
C
C
G
C
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
12
7.6
48
5.5
454
908
5
208
1.7
-50 to 150
300
AOT12N50
65
0.5
0.6
12*
7.6*
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
A
50
0.4
Symbol
R
θJA
Maximum Junction-to-Ambient
A
R
θCS
Maximum Case-to-Sink
D,F
R
θJC
Maximum Junction-to-Case
* Drain current limited by maximum junction temperature.
AOTF12N50
65
-
2.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
