AOT2N60/AOTF2N60
600V, 2A N-Channel MOSFET
General Description
The AOT2N60 & AOTF2N60 have been fabricated
using an advanced high voltage MOSFET process
that is designed to deliver high levels of performance
and robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
V
DS
(V) = 700V @ 150°C
I
D
= 2A
R
DS(ON)
< 4.4Ω
(V
GS
= 10V)
100% UIS Tested!
100% R
g
Tested!
C
iss
, C
oss
, C
rss
Tested!
TO-220
Top View
TO-220F
D
G
D
G
S
D
G
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AOT2N60
Parameter
AOTF2N60
Symbol
V
DS
Drain-Source Voltage
600
V
GS
±30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C, G
C, G
G
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
2
1.6
8
2
60
120
5
74
0.6
-50 to 150
300
AOT2N60
65
0.5
1.7
2*
1.6*
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
A,D
31
0.25
Symbol
R
θJA
Maximum Junction-to-Ambient
A
R
θCS
Maximum Case-to-Sink
R
θJC
Maximum Junction-to-Case
* Drain current limited by maximum junction temperature.
AOTF2N60
65
--
4.0
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
